HIGH-FREQUENCY HEATING OF SILICON IN THE TECHNOLOGY OF ITS PRODUCTION FROM THE GASEOUS PHASE
Nikita A. Ivanov
Pages: 50-59
Publié: 1 Jan 2011
Vues: 420 Téléchargements: 42
Résumé: The article is dedicated to investigation of the “high-frequency start” of heating of silicon in technology of its production. The dielectric properties of silicon substrate which are used on the undertaking “Usolie Sibirskii Silikon”. The scaled experiment were made on heating of silicon substrate under conditions approximating to the industrial reactor on different frequencies. The conductivity and capacity dependences of temperature on the frequencies 1KHz and 1 MHz are investigated. The efficiency of heating of silicon and dielectric loss in the rang of different frequencies are investigated.
Mots-clés : silicon substrate, dielectric properties, temperature dependence, dielectric loss
Citer cet article : Nikita A. Ivanov. HIGH-FREQUENCY HEATING OF SILICON IN THE TECHNOLOGY OF ITS PRODUCTION FROM THE GASEOUS PHASE. Journal of International Scientific Publications: Materials, Methods & Technologies 5, 50-59 (2011). https://www.scientific-publications.net/en/article/1003353/
Disclaimer: The Publisher and/or the editor(s) are not responsible for the statements, opinions, and data contained in any published works. These are solely the views of the individual author(s) and contributor(s). The Publisher and/or the editor(s) disclaim any liability for injury to individuals or property arising from the ideas, methods, instructions, or products mentioned in the content.
Submit Feedback
We value your input! Use this form to report any concerns or provide feedback on our published articles. All submissions will be kept confidential.
