HIGH-FREQUENCY HEATING OF SILICON IN THE TECHNOLOGY OF ITS PRODUCTION FROM THE GASEOUS PHASE
Nikita A. Ivanov
Pagini: 50-59
Publicat: 1 Jan 2011
Vizualizări: 106
Rezumat: The article is dedicated to investigation of the “high-frequency start” of heating of silicon in technology of its production. The dielectric properties of silicon substrate which are used on the undertaking “Usolie Sibirskii Silikon”. The scaled experiment were made on heating of silicon substrate under conditions approximating to the industrial reactor on different frequencies. The conductivity and capacity dependences of temperature on the frequencies 1KHz and 1 MHz are investigated. The efficiency of heating of silicon and dielectric loss in the rang of different frequencies are investigated.
Cuvinte cheie: silicon substrate, dielectric properties, temperature dependence, dielectric loss
Citează acest articol: Nikita A. Ivanov. HIGH-FREQUENCY HEATING OF SILICON IN THE TECHNOLOGY OF ITS PRODUCTION FROM THE GASEOUS PHASE. Journal of International Scientific Publications: Materials, Methods & Technologies 5, 50-59 (2011). https://www.scientific-publications.net/en/article/1003353/
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