CHARACTERIZATION OF SAMARIUM COPPER TANTALATE - A NEW PEROVSKITE MATERIAL WITH HIGH DIELECTRIC PERMITTIVITY
Dorota Szwagierczak, Jan Kulawik
Strony: 332-338
Opublikowano: 1 Jan 2012
Wyświetlenia: 233
Pobrania: 21
Streszczenie: A permanent progress in miniaturization of electronic capacitive elements requires development of new materials exhibiting a high dielectric constant. The paper reports on synthesis and sintering conditions and dielectric properties of a new ceramic material with the composition Sm2/3CuTa4O 12. This material has a complex perovskite structure analogous to that of Cu2Ta4O 12. Its high dielectric 5 permittivity reaching 10 could be attributed to spontaneous formation of internal barrier layer capacitors (IBLC). Complex impedance spectroscopic studies carried out at frequencies of 10 Hz – 2 MHz and in a wide temperature range from -55 to 700°C reveal two types of dielectric response of the ceramic samples. A high-frequency and low-temperature response is related to grains, whereas a low-frequency and high-temperature response is attributed to grain boundaries. Scanning electron microscope images and energy-dispersive X-ray microanalysis confirmed the existence of semiconducting grains and more resistive grain boundaries in the investigated ceramic material.
Słowa kluczowe: samarium copper tantalate, perovskite ceramic, dielectric properties, internal barrier layer capacitor
Cytowanie artykułu: Dorota Szwagierczak, Jan Kulawik. CHARACTERIZATION OF SAMARIUM COPPER TANTALATE - A NEW PEROVSKITE MATERIAL WITH HIGH DIELECTRIC PERMITTIVITY. Journal of International Scientific Publications: Materials, Methods & Technologies 6, 332-338 (2012). https://www.scientific-publications.net/en/article/1003182/
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