Materials, Methods & Technologies, Volume 8, 2014

Аннотация: Complex studying of microstructure, electrophysical characteristics and internal friction and shear modulus temperature spectra of monocrystalline Si-Ge-B alloys during torsion oscillations of 1Hz frequency were conducted. Boron doped Si1-xGex (x<0,03) bulk monocrystals with [111] orientation were obtained by the Czochralski method. Regularities of changing of density and character of dislocation distribution on (111) planes, concentration and mobility of current carriers, activation characteristics of relaxation internal friction maximum were established. Establishment of correlation between their real structure, electrophysical and structural-sensitive physical-mechanical characteristics is important for broadening of practical application areas of Si-Ge bulk crystals. From this point of view in the present work microstructure, electrophysical characteristics, shear modulus and internal friction temperature spectra of Si Ge alloys depending on boron doping level have been studied. The contribution of various dislocations in variations of dynamical mechanical characteristics and relaxation internal friction in Si-Ge alloys have been discussed.