DEVELOPING THE PROCESS FOR THROUGH-ETCHING OF SINGLE-CRYSTAL QUARTZ IN INDUCTIVELY COUPLED PLASMAS
Artem A. Osipov, Sergey E. Alexandrov
Strony: 286-294
Opublikowano: 6 Sep 2018
Wyświetlenia: 1,497
Pobrania: 223
Streszczenie: The possibility of using the Taguchi method to create an optimized process for deep-through plasma-chemical etching of single-crystal quartz with a minimum number of experiments is considered. The technological parameters of the PCE process in CH4/H2 and SF6/O2 plasmas have been ranked according to the degree of significance of their influence on the etching rate. The influence nature of these parameters on the etching rate is analyzed.
Słowa kluczowe: dry etching, quartz, cf4+h2 plasma, sf6+o2 plasma, inductively coupled plasma, etching rate
Cytowanie artykułu: Artem A. Osipov, Sergey E. Alexandrov. DEVELOPING THE PROCESS FOR THROUGH-ETCHING OF SINGLE-CRYSTAL QUARTZ IN INDUCTIVELY COUPLED PLASMAS. Journal of International Scientific Publications: Materials, Methods & Technologies 12, 286-294 (2018). https://www.scientific-publications.net/en/article/1001706/
Powrót do spisu treści tomu
© 2025 The Author(s). This is an open access article distributed under the terms of the
Creative Commons Attribution License https://creativecommons.org/licenses/by/4.0/, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited. This permission does not cover any third party copyrighted material which may appear in the work requested.
Disclaimer: The Publisher and/or the editor(s) are not responsible for the statements, opinions, and data contained in any published works. These are solely the views of the individual author(s) and contributor(s). The Publisher and/or the editor(s) disclaim any liability for injury to individuals or property arising from the ideas, methods, instructions, or products mentioned in the content.
