DEVELOPING THE PROCESS FOR THROUGH-ETCHING OF SINGLE-CRYSTAL QUARTZ IN INDUCTIVELY COUPLED PLASMAS
Artem A. Osipov, Sergey E. Alexandrov
Pagini: 286-294
Publicat: 6 Sep 2018
Vizualizări: 1,490
Descărcări: 223
Rezumat: The possibility of using the Taguchi method to create an optimized process for deep-through plasma-chemical etching of single-crystal quartz with a minimum number of experiments is considered. The technological parameters of the PCE process in CH4/H2 and SF6/O2 plasmas have been ranked according to the degree of significance of their influence on the etching rate. The influence nature of these parameters on the etching rate is analyzed.
Cuvinte cheie: dry etching, quartz, cf4+h2 plasma, sf6+o2 plasma, inductively coupled plasma, etching rate
Citează acest articol: Artem A. Osipov, Sergey E. Alexandrov. DEVELOPING THE PROCESS FOR THROUGH-ETCHING OF SINGLE-CRYSTAL QUARTZ IN INDUCTIVELY COUPLED PLASMAS. Journal of International Scientific Publications: Materials, Methods & Technologies 12, 286-294 (2018). https://www.scientific-publications.net/en/article/1001706/
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