DEVELOPING THE PROCESS FOR THROUGH-ETCHING OF SINGLE-CRYSTAL QUARTZ IN INDUCTIVELY COUPLED PLASMAS
Artem A. Osipov, Sergey E. Alexandrov
Pages: 286-294
Published: 6 Sep 2018
Views: 1,225
Downloads: 201
Abstract: The possibility of using the Taguchi method to create an optimized process for deep-through plasma-chemical etching of single-crystal quartz with a minimum number of experiments is considered. The technological parameters of the PCE process in CH4/H2 and SF6/O2 plasmas have been ranked according to the degree of significance of their influence on the etching rate. The influence nature of these parameters on the etching rate is analyzed.
Keywords: dry etching, quartz, cf4+h2 plasma, sf6+o2 plasma, inductively coupled plasma, etching rate
Cite this article: Artem A. Osipov, Sergey E. Alexandrov. DEVELOPING THE PROCESS FOR THROUGH-ETCHING OF SINGLE-CRYSTAL QUARTZ IN INDUCTIVELY COUPLED PLASMAS. Journal of International Scientific Publications: Materials, Methods & Technologies 12, 286-294 (2018). https://www.scientific-publications.net/en/article/1001706/
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