HIGH-FREQUENCY HEATING OF SILICON IN THE TECHNOLOGY OF ITS PRODUCTION FROM THE GASEOUS PHASE

Nikita A. Ivanov

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Materials, Methods & Technologies 2026, 28th International Conference

13-16 August, Burgas, Bulgaria

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Materials, Methods & Technologies, Volume 5, 2011

HIGH-FREQUENCY HEATING OF SILICON IN THE TECHNOLOGY OF ITS PRODUCTION FROM THE GASEOUS PHASE

Nikita A. Ivanov

Страницы: 50-59
Опубликовано: 1 Jan 2011
Просмотры: 451
Загрузки: 44

Аннотация: The article is dedicated to investigation of the “high-frequency start” of heating of silicon in technology of its production. The dielectric properties of silicon substrate which are used on the undertaking “Usolie Sibirskii Silikon”. The scaled experiment were made on heating of silicon substrate under conditions approximating to the industrial reactor on different frequencies. The conductivity and capacity dependences of temperature on the frequencies 1KHz and 1 MHz are investigated. The efficiency of heating of silicon and dielectric loss in the rang of different frequencies are investigated.

Ключевые слова: silicon substrate, dielectric properties, temperature dependence, dielectric loss

Цитировать эту статью: Nikita A. Ivanov. HIGH-FREQUENCY HEATING OF SILICON IN THE TECHNOLOGY OF ITS PRODUCTION FROM THE GASEOUS PHASE. Journal of International Scientific Publications: Materials, Methods & Technologies 5, 50-59 (2011). https://www.scientific-publications.net/en/article/1003353/

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