DEVELOPING THE PROCESS FOR THROUGH-ETCHING OF SINGLE-CRYSTAL QUARTZ IN INDUCTIVELY COUPLED PLASMAS
Artem A. Osipov, Sergey E. Alexandrov
Страницы: 286-294
Опубликовано: 6 Sep 2018
Просмотры: 2,579
Загрузки: 335
Citations: 3 (Google Scholar)
Citations: 1 (OpenAlex)
Аннотация: The possibility of using the Taguchi method to create an optimized process for deep-through plasma-chemical etching of single-crystal quartz with a minimum number of experiments is considered. The technological parameters of the PCE process in CH4/H2 and SF6/O2 plasmas have been ranked according to the degree of significance of their influence on the etching rate. The influence nature of these parameters on the etching rate is analyzed.
Ключевые слова: dry etching, quartz, cf4+h2 plasma, sf6+o2 plasma, inductively coupled plasma, etching rate
Цитировать эту статью: Artem A. Osipov, Sergey E. Alexandrov. DEVELOPING THE PROCESS FOR THROUGH-ETCHING OF SINGLE-CRYSTAL QUARTZ IN INDUCTIVELY COUPLED PLASMAS. Journal of International Scientific Publications: Materials, Methods & Technologies 12, 286-294 (2018). https://www.scientific-publications.net/en/article/1001706/
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